鈩?/div>
@ V
GS
= 10V.
Proprietary SuperSOT
TM
-6 package design using copper
lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low R
DS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
____________________________________________________________________________________________
4
3
5
2
6
1
Absolute Maximum Ratings
T
A
= 25擄C unless otherwise note
Symbol Parameter
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage - Continuous
Drain Current - Continuous
- Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
NDC651N
30
20
3.2
15
1.6
1
0.8
-55 to 150
Units
V
V
A
W
T
J
,T
STG
Operating and Storage Temperature Range
擄C
THERMAL CHARACTERISTICS
R
胃
JA
R
胃
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
擄C/W
擄C/W
漏 1997 Fairchild Semiconductor Corporation
NDC651N Rev. D1