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IRFU3710Z Datasheet

  • IRFU3710Z

  • Specifically designed for Automotive applications, this HEXF...

  • 11頁(yè)

  • IRF

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PD - 94740
AUTOMOTIVE MOSFET
IRFR3710Z
IRFU3710Z
HEXFET
廬
Power MOSFET
D
Features
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
175擄C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
V
DSS
= 100V
G
S
R
DS(on)
= 18m鈩?/div>
I
D
= 42A
Description
Specifically designed for Automotive applications, this HEXFET
廬
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175擄C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and
a wide variety of other applications.
D-Pak
IRFR3710Z
I-Pak
IRFU3710Z
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100擄C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25擄C Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
I
DM
Max.
56
39
42
220
140
Units
A
聶
P
D
@T
C
= 25擄C Power Dissipation
V
GS
E
AS (Thermally limited)
E
AS
(Tested )
I
AR
E
AR
T
J
T
STG
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
W
W/擄C
V
mJ
A
mJ
Single Pulse Avalanche Energy Tested Value
h
Avalanche Current
脙聶
Repetitive Avalanche Energy
g
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
d
0.95
鹵 20
150
200
See Fig.12a, 12b, 15, 16
-55 to + 175
擄C
300 (1.6mm from case )
10 lbf in (1.1N m)
Thermal Resistance
Parameter
R
胃JC
R
胃JA
R
胃JA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
y
y
Typ.
Max.
1.05
40
110
Units
擄C/W
i
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
HEXFET
廬
is a registered trademark of International Rectifier.
www.irf.com
1
7/31/03

IRFU3710Z 產(chǎn)品屬性

  • 75

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • HEXFET®

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 100V

  • 42A

  • 18 毫歐 @ 33A，10V

  • 4V @ 250µA

  • 100nC @ 10V

  • 2930pF @ 25V

  • 140W

  • 通孔

  • TO-251-3 長(zhǎng)引線，IPak，TO-251AB

  • I-Pak

  • 管件

  • *IRFU3710Z

IRFU3710Z相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
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    描述
    廠商
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