PD - 94373
SMPS MOSFET
Applications
l
Switch Mode Power Supply (SMPS)
l
Motor Drive
l
Bridge Converters
l
All Zero Voltage Switching
Benefits
l
Low Gate Charge Qg results in Simple
Drive Requirement
l
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l
Fully Characterized Capacitance and
Avalanche Voltage and Current
l
Enhanced Body Diode dv/dt Capability
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
聝
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 second
Mounting torqe, 6-32 or M3 screw
IRFR3412
IRFU3412
HEXFET
廬
Power MOSFET
V
DSS
100V
R
DS(on)
max
0.025鈩?/div>
I
D
48A聠
D-Pak
IRFR3412
I-Pak
IRFU3412
Max.
48
聠
34
聠
190
140
0.95
鹵 20
6.4
-55 to + 175
300(1.6mm from case )
10 lbf鈥n (1.1N鈥)
Units
A
W
W/擄C
V
V/ns
擄C
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
聛
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Reverse RecoveryCurrent
Forward Turn-On Time
Min. Typ. Max. Units
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
48
聠
190
A
鈥撯€撯€?鈥撯€撯€?1.3
V
聞
鈥撯€撯€?68 100
ns
鈥撯€撯€?160 240
nC
鈥撯€撯€?4.5 6.8
A
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25擄C, I
S
= 29A, V
GS
= 0V
T
J
= 125擄C, I
F
= 29A
di/dt = 100A/碌s
聞
D
S
www.irf.com
1
1/22/02
IRFU3412相關(guān)型號(hào)PDF文件下載
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