PD - 94361
IRFP4710
HEXFET
廬
Power MOSFET
Applications
l
High frequency DC-DC converters
l
Motor Control
l
Uninterruptible Power Supplies
Benefits
l
Low Gate-to-Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
聝
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
V
DSS
100V
R
DS(on)
max
0.014鈩?/div>
I
D
72A
TO-247AC
Max.
72
51
300
190
1.2
鹵 20
8.2
-55 to + 175
300 (1.6mm from case )
10 lbf鈥n (1.1N鈥)
Units
A
W
W/擄C
V
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
鈥撯€撯€?/div>
0.24
鈥撯€撯€?/div>
Max.
0.81
鈥撯€撯€?/div>
40
Units
擄C/W
Notes
聛
through
聟
are on page 8
www.irf.com
1
01/08/02
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