鈩?/div>
General Description
This device employs advanced MOSFET technology and
features low gate charge while maintaining low on-
resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Features
鈥?Fast switching
鈥?r
DS(ON)
= 0.014鈩?(Typ), V
GS
= 10V
鈥?r
DS(ON)
= 0.024鈩?(Typ), V
GS
= 4.5V
鈥?Q
g
(Typ) = 9.6nC, V
GS
= 5V
鈥?Q
gd
(Typ) = 3.4nC
鈥?C
ISS
(Typ) = 900pF
Applications
鈥?DC/DC converters
DRAIN
(FLANGE)
GATE
G
SOURCE
D
TO-252AA
FDD SERIES
S
MOSFET Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
DSS
V
GS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
I
D
Continuous (T
C
= 100 C, V
GS
= 4.5V)
Continuous (T
C
=
Pulsed
P
D
T
J
, T
STG
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
25
o
C,
V
GS
= 10V, R
胃JA
=
52
o
C/W)
o
Ratings
30
鹵20
30
19
7.9
Figure 4
45
0.37
-55 to 150
Units
V
V
A
A
A
A
W
W/
o
C
o
C
Thermal Characteristics
R
胃
JC
R
胃
JA
R
胃
JA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in
2
copper pad area
2.73
100
52
o
C/W
C/W
o
C/W
o
Package Marking and Ordering Information
Device Marking
FQD60N03L
Device
FQD60N03L
Package
TO-252AA
Reel Size
330mm
Tape Width
16mm
Quantity
2500 units
漏2004 Fairchild Semiconductor Corporation
FQD60N03L Rev. B1