FMD40-06KC Datasheet

IC型號：
FMD40-06KC
PDF描述：
HiPerFET Power MOSFETs -Boost Chopper Topology in ISOPLUS i4...
文件大?。?/label>
49.93KB
PDF頁數(shù)：
2頁
芯片廠家：
IXYS

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Advanced Technical Information

FMD 40-06KC

D25

= 38 A

DSS

= 600 V

DSon

= 60 m鈩?/div>

鈩?/div>

HiPerFET

Power MOSFETs

-Boost Chopper Topology-

in ISOPLUS i4-PAC

MOSFET

Symbol

DSS

D25

D90

= 25擄C

= 90擄C

Conditions

= 25擄C to 150擄C

Maximum Ratings

600

鹵20

Features

鈥?fast CoolMOS power MOSFET - 3rd

generation

- high blocking voltage

- low on resistance

- low thermals resistance due to reduced

chip thickness

鈥?HiPerDyn

FRED

- consisting of series connected diodes

- enhanced dynamic behaviour for

high frequency operation

鈥?ISOPLUS i4-PAC

package

- isolated back surface

- low coupling capacity between pins

and heatsink

- enlarged creepage towards heatsink

- application friendly pinout

- low inductive current path

- high reliability

- industry standard outline

- UL registered, E 72873

Applications

鈥?chopper for power factor correction

鈥?supply of high frequency transformer

- switched mode power supplies

- welding converters

Symbol

Conditions

Characteristic Values

= 25擄C, unless otherwise specified)

min.

typ. max.

2.1

250

200

250

120

110

0.9

tbd

70 m鈩?/div>

3.9

碌A(chǔ)

0.45 K/W

K/W

DSon

GSth

DSS

GSS

d(on)

d(off)

thJC

thJS

= 10 V; I

= 20 A

= 20 V; I

= 2.7 mA

= V

DSS

; V

= 0 V; T

= 25擄C

= 125擄C

= 鹵20 V; V

= 0 V

= 10 V; V

= 350 V; I

= 47 A

= 10 V; V

= 380 V;

= 47 A; R

= 1.8

鈩?/div>

(reverse conduction) I

= 20 A; V

= 0 V

IXYS reserves the right to change limits, test conditions and dimensions.

1-2

439

標(biāo)準(zhǔn)包裝
24
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
HiPerFET™
FET 型
MOSFET N 通道，金屬氧化物
FET 特點
標(biāo)準(zhǔn)型
漏極至源極電壓(Vdss)
600V
電流 - 連續(xù)漏極(Id) @ 25° C
38A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
70 毫歐 @ 20A，10V
Id 時的 Vgs(th)（最大）
3.9V @ 2.7mA
閘電荷(Qg) @ Vgs
250nC @ 10V
輸入電容 (Ciss) @ Vds
-
功率 - 最大
-
安裝類型
通孔
封裝/外殼
i4-Pac?-5
供應(yīng)商設(shè)備封裝
ISOPLUS i4-PAC?
包裝
管件

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