鈥?/div>
Power Factor Correction (PFC) circuits
Full bridge topologies
Half bridge topologies
Push-Pull circuits
Uninterruptible power supplies
Zero voltage and zero current switching circuits
Features
鈥?100kHz Operation at 390V, 7A
鈥?200kHZ Operation at 390V, 5A
鈥?600V Switching SOA Capability
鈥?Typical Fall Time . . . . . . . . . . 85ns at TJ = 125
o
C
鈥?Low Gate Charge . . . . . . . . . 30nC at V
GE
= 15V
鈥?Low Plateau Voltage . . . . . . . . . . . . . 6.5V Typical
鈥?UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 100mJ
鈥?Low Conduction Loss
鈥?Low E
on
Formerly Developmental Type TA49330.
Package
TO-247
E
C
G
Symbol
C
TO-220AB
E
C
G
TO-263AB
G
G
E
E
COLLECTOR
(Back-Metal)
COLLECTOR
(Flange)
Device Maximum Ratings
T
C
= 25擄C unless otherwise noted
Symbol
BV
CES
I
C25
I
C110
I
CM
V
GES
V
GEM
SSOA
E
AS
E
ARV
P
D
T
J
T
STG
Parameter
Collector to Emitter Breakdown Voltage
Collector Current Continuous, T
C
= 25擄C
Collector Current Continuous, T
C
= 110擄C
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
Switching Safe Operating Area at T
J
= 150擄C, Figure 2
Pulsed Avalanche Energy, I
CE
= 7.0A, L = 4mH, V
DD
= 50V
Pulsed Avalanche Energy, I
CE
= 7.0A, L = 4mH, V
DD
= 50V
Power Dissipation Total T
C
= 25擄C
Power Dissipation Derating T
C
> 25擄C
Operating Junction Temperature Range
Storage Junction Temperature Range
Ratings
600
28
13
40
鹵20
鹵30
35 at 600V
100
100
125
1.0
-55 to 150
-55 to 150
Units
V
A
A
A
V
V
A
mJ
mJ
W
W/擄C
擄C
擄C
CAUTION: Stresses above those listed in 鈥淒evice Maximum Ratings鈥?may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
漏2003 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2
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