FDS6614A
January 2000
FDS6614A
N-Channel Logic Level PowerTrench
廬
MOSFET
General Description
This N-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize on-state
resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.
Features
聲
聲
聲
聲
聲
9.3 A, 30 V. R
DS(on)
= 0.018
W
@ V
GS
= 10 V
R
DS(on)
= 0.025
W
@ V
GS
= 4.5 V.
Low gate charge (12nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(on)
.
High power and current handling capability.
Applications
聲
聲
聲
DC/DC converter
Load switch
Motor drives
D
D
D
D
5
6
4
3
2
1
SO-8
S
S
S
G
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
30
鹵
20
(Note 1a)
Units
V
V
A
W
9.3
40
2.5
1.2
1.0
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
stg
Operating and Storage Junction Temperature Range
擄C
Thermal Characteristics
R
胃JA
R
胃JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
擄C/W
擄C/W
Package Marking and Ordering Information
Device Marking
FDS6614A
茫1999
Fairchild Semiconductor Corporation
Device
FDS6614A
Reel Size
13鈥欌€?/div>
Tape width
12mm
Quantity
2500 units
FDS6614A Rev. C
next