November 1998
FDR8308P
Dual P-Channel, Logic Level, PowerTrench
TM
MOSFET
General Description
The SuperSOT-8 family of P-Channel Logic Level MOSFETs
have been designed to provide a low profile, small footprint
alternative to industry standard SO-8 little foot type product.
These P-Channel Logic Level MOSFETs are produced using
Fairchild Semiconductor's advanced PowerTrench process that
has been tailored to minimize the on-state resistance and yet
maintain superior switching performance.
These devices are well suited for portable electronics
applications: load switching and power management, battery
charging circuits, and DC/DC conversion.
Features
-3.2 A, -20 V. R
DS(ON)
= 0.050
鈩?/div>
@ V
GS
= -4.5 V,
R
DS(ON)
= 0.070
鈩?/div>
@ V
GS
= -2.5 V.
Low gate charge (13nC typical).
High performance trench technology for extremely low
R
DS(ON)
.
SuperSOT
TM
-8 package: small footprint (40% less than
SO-8); low profile(1mmthick); maximum power
comparable to SO-8.
SOT-23
SuperSOT
TM
-6
SuperSOT
TM
-8
SO-8
SOT-223
SOIC-16
D2
D1
D1
D2
8P
30
8
5
6
S2
7
8
4
3
2
1
G2
pin
1
SuperSOT -8
TM
G1
S1
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25
o
C unless otherwise noted
FDR8308P
Units
V
DSS
V
GSS
I
D
P
D
T
J
,T
STG
R
胃
JA
R
胃
JC
Drain-Source Voltage
Gate-Source Voltage
Draint Current - Continuous
- Pulsed
Maximum Power Dissipation
(Note 1)
(Note 1)
-20
鹵8
-3.2
-20
0.8
-55 to 150
V
V
A
W
擄C
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1)
(Note 1)
156
40
擄C/W
擄C/W
FDR8308P Rev.C
漏 1998 Fairchild Semiconductor Corporation
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