Ordering number:EN4337A
FC807
Silicon Epitaxial Planar Type
High-Speed Switching Composite Diode
(Anode Common)
Features
路 Composite type with 4diodes contined in the CP
package currently in use, improving the mouting
efficiency greatly.
路 Fast switching speed.
Package Dimensions
unit:mm
1249A
[FC807]
1:Cathode
2:Cathode
3:Cathode
4:Anode
5:Cathode
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Peak Reverse Voltage
Reverse Voltage
Surge Current
Average Rectified Current
Peak Forward Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VRM
VR
IFSM
IO*
IFM*
P*
Tj
Tstg
10ms*
Conditions
SANYO:CP5
Ratings
85
80
2
100
300
200
150
鈥?5 to +150
Unit
V
V
A
mA
mA
mW
藲C
藲C
Note*:Unit rating. The total rating is 150% of the unit rating.
Electrical Characteristics
at Ta = 25藲C
Parameter
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Symbol
VF
IR
C
trr
IF=10mA
IF=100mA
VR=50V
VR=80V
VR=0V, f=1MHz
IF=10mA, VR=6V, RL=50
鈩?/div>
, irr=0.1Irp
4.5
Conditons
Ratings
min
typ
0.72
0.88
max
1.0
1.2
0.1
0.5
9.0
8.0
Unit
V
V
碌A(chǔ)
碌A(chǔ)
pF
ns
Note:The specifications shown above are for individual diode.
Marking:807
Electrical Connection
Reverse Recovery Time Test Circuit
1:Cathode
2:Cathode
3:Cathode
4:Anode
5:Cathode
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/12097GI/82093YH (KOTO) X-7218 No.4337-1/2
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