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XP04878 Datasheet

  • XP04878

  • Silicon N-channel MOSFET

  • 83.54KB

  • 3頁

  • PANASONIC

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Composite Transistors
XP04878
Silicon N-channel MOSFET
(0.425)
Unit: mm
0.12
+0.05
鈥?.02
For switching
鈻?/div>
Features
鈥?/div>
Allowing 2.5 V drive
鈥?/div>
Incorporating a built-in gate protection-diode
鈥?/div>
S-Mini type 6-pin package, reduction of the mounting area and
assembly cost by one half
10藲
0.2
鹵0.05
6
5
4
1.25
鹵0.10
2.1
鹵0.1
1
2
3
(0.65) (0.65)
1.3
鹵0.1
2.0
鹵0.1
0.9
鹵0.1
鈥?/div>
2SK3539
脳
2
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Drain-source surrender voltage
Gate-source voltage (Drain open)
Drain current
Peak drain current
Total power dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSO
I
D
I
DP
P
T
T
ch
T
stg
Rating
50
鹵7
100
200
150
150
鈭?5
to
+150
Unit
V
V
mA
mA
mW
擄C
擄C
1: Source (FET1)
2: Gate (FET1)
3: Drain (FET2)
EIAJ: SC-88
0 to 0.1
0.9
+0.2
鈥?.1
鈻?/div>
Basic Part Number
4: Source (FET2)
5: Gate (FET2)
6: Drain (FET1)
SMini6-G1 Package
Marking Symbol: 7Y
Internal Connection
6
5
4
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
Drain-source ON resistance
Symbol
V
DSS
I
DSS
I
GSS
V
th
R
DS(on)
錚
fs
錚?/div>
C
iss
C
oss
C
rss
t
on
t
off
V
DD
=
3 V, V
GS
=
0 V to 3 V, R
L
=
470
鈩?/div>
V
DD
=
3 V, V
GS
=
3 V to 0 V, R
L
=
470
鈩?/div>
Conditions
I
D
=
10
碌A,
V
GS
=
0
V
DS
=
50 V, V
GS
=
0
V
GS
= 鹵7
V, V
DS
=
0
I
D
=
1
碌A,
V
DS
=
3 V
I
D
=
10 mA, V
GS
=
2.5 V
I
D
=
10 mA, V
GS
=
4.0 V
Forward transfer admittance
Short-circuit forward transfer
capacitance (Common-source)
Short-circuit output capacitance
(Common-source)
Reverse transfer capacitance
(Common-source)
Turn-on time
Turn-off time
I
D
=
10 mA, V
GS
=
4.0 V
V
DS
=
3 V, V
GS
=
0 V, f
=
1 MHz
20
0.9
50
1
Min
2
Typ
3
Max
Unit
V
1.0
鹵5
碌A
碌A
V
鈩?/div>
mS
pF
pF
pF
ns
ns
1.2
8
6
60
12
7
3
200
200
1.5
15
12
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
0.2
鹵0.1
5藲
Publication date: December 2003
SJJ00263BED
1

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