鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
Transition frequency
Noise figure
Reverse transfer impedance
Reverse transfer capacitance (Common emitter)
Symbol
V
BE
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
f
T
NF
Z
rb
C
re
Conditions
V
CE
= 鈭?0
V, I
C
= 鈭?
mA
V
CB
= 鈭?0
V, I
E
=
0
V
CE
= 鈭?0
V, I
B
=
0
V
EB
= 鈭?
V, I
C
=
0
V
CE
=
鈭?0
V, I
C
=
鈭?
mA
I
C
= 鈭?0
mA, I
B
= 鈭?
mA
V
CB
= 鈭?0
V, I
E
=
1 mA, f
=
200 MHz
V
CB
= 鈭?0
V, I
E
=
1 mA, f
=
5 MHz
V
CB
= 鈭?0
V, I
E
=
1 mA, f
=
2 MHz
V
CB
= 鈭?0
V, I
E
=
1 mA, f
=
10.7 MHz
150
70
鈭?/div>
0.1
300
2.8
22
1.2
4.0
50
2.0
Min
Typ
鈭?/div>
0.7
鈭?/div>
0.1
鈭?00
鈭?0
220
Max
Unit
V
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
錚?/div>
V
MHz
dB
鈩?/div>
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
B
70 to 140
C
110 to 220
0.10 max.
(0.375)
Publication date: July 2003
SJC00291AED
1
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