Composite Transistors
XP04506
(XP4506)
Silicon NPN epitaxial planer transistor
Unit: mm
0.425
1.25鹵0.1
0.425
0.2鹵0.05
For amplification of low frequency output
2.1鹵0.1
0.65
G
G
G
High emitter to base voltage V
EBO
.
High forward current transfer ratio h
FE
.
Low ON resistor R
on
.
2.0鹵0.1
I
Features
0.65
1
2
3
6
5
4
0.2
0.9鹵0.1
G
0 to 0.1
I
Basic Part Number of Element
2SD1915F
脳
2 elements
0.7鹵0.1
0.2鹵0.1
I
Absolute Maximum Ratings
(Ta=25藲C)
Parameter
Collector to base voltage
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
Ratings
50
20
25
300
500
150
150
鈥?5 to +150
Unit
V
V
V
mA
mA
mW
藲C
藲C
1 : Emitter (Tr1)
4 : Emitter (Tr2)
2 : Base (Tr1)
5 : Base (Tr2)
3 : Collector (Tr2) 6 : Collector (Tr1)
EIAJ : SC鈥?8
S鈥揗ini Type Package (6鈥損in)
Collector to emitter voltage
Rating
Emitter to base voltage
of
element Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Marking Symbol:
EN
Internal Connection
1
2
3
Tr1
6
5
4
Tr2
I
Electrical Characteristics
Parameter
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
ON Resistance
*1
(Ta=25藲C)
Symbol
V
CEO
I
CBO
I
EBO
h
FE
V
BE
V
CE(sat)
f
T
C
ob
R
on*1
1k鈩?/div>
I
B
=1mA
f=1kHz
V=0.3V
Conditions
I
C
= 1mA, I
B
= 0
V
CB
= 50V, I
E
= 0
V
EB
= 25V, I
C
= 0
V
CE
= 2V, I
C
= 4mA
V
CE
= 2V, I
C
= 4mA
I
C
= 30mA, I
B
= 3mA
V
CB
= 6V, I
E
= 鈥?mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
20
typ
max
0.12
鈥?.02
+0.05
Unit
V
碌A(chǔ)
碌A(chǔ)
V
0.1
0.1
500
0.6
0.1
80
7
1
2500
V
MHz
pF
鈩?/div>
R
on
measuring circuit
V
B
V
V
V
A
R
on
=
V
B
鉁?000(鈩?
V
A
鈥揤
B
Note.) The Part number in the Parenthesis shows conventional part number.
1
1
2
3
