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Composite Transistors

XP04387

Silicon NPN epitaxial planer transistor (Tr1)

Silicon PNP epitaxial planer transistor (Tr2)

Unit: mm

0.425

1.25鹵0.1

0.425

0.2鹵0.05

For switching/digital circuits

0.65

2.1鹵0.1

0.65

q

q

Two elements incorporated into one package.

(Transistors with built-in resistor)

Reduction of the mounting area and assembly cost by one half.

2.0鹵0.1

s

Features

1

2

3

6

5

4

0.2

0.9鹵0.1

s

Basic Part Number of Element

q

0.7鹵0.1

UN1213+UN1119

0 to 0.1

0.2鹵0.1

s

Absolute Maximum Ratings

Parameter

Collector to base voltage

Tr1

Collector to emitter voltage

Collector current

Collector to base voltage

Tr2

Collector to emitter voltage

Collector current

Total power dissipation

Overall Junction temperature

Storage temperature

Symbol

V

CBO

V

CEO

I

C

V

CBO

V

CEO

I

C

P

T

T

j

T

stg

(Ta=25藲C)

Ratings

50

50

100

鈥?0

鈥?0

鈥?00

150

150

鈥?5 to +150

Unit

V

V

mA

V

V

mA

mW

藲C

1 : Emitter (Tr1)

4 : Emitter (Tr2)

2 : Base (Tr1)

5 : Base (Tr2)

3 : Collector (Tr2) 6 : Collector (Tr1)

EIAJ : SC鈥?8

S鈥揗ini Type Package (6鈥損in)

Marking Symbol:

IT

Internal Connection

1

2

3

Tr1

6

5

4

藲C

Tr2

0.12

鈥?.02

+0.05

1

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