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XP04215 Datasheet

  • XP04215

  • Silicon NPN epitaxial planar type

  • 3頁

  • PANASONIC

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Composite Transistors
XP04215
(XP4215)
Silicon NPN epitaxial planar type
(0.425)
Unit: mm
0.12
+0.05
鈥?.02
For switching/digital circuits
鈻?/div>
Features
鈥?/div>
Two elements incorporated into one package
(Transistors with built-in resistor)
鈥?/div>
Reduction of the mounting area and assembly cost by one half
0.2
鹵0.05
6
5
4
1.25
鹵0.10
2.1
鹵0.1
1
2
3
(0.65) (0.65)
1.3
鹵0.1
2.0
鹵0.1
10藲
鈻?/div>
Basic Part Number
鈥?/div>
UNR2215 (UN2215)
脳
2
0.9
鹵0.1
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
50
50
100
150
150
鈭?5
to
+150
Unit
V
V
mA
mW
擄C
擄C
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
EIAJ : SC-88
0 to 0.1
Marking Symbol: 8T
Internal Connection
6
5
4
Tr1
0.9
+0.2
鈥?.1
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
SMini6-G1 Package
Tr2
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Transition frequency
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
OH
V
OL
R
1
f
T
V
CB
=
10 V, I
E
= 鈭?
mA, f
=
200 MHz
Conditions
I
C
=
10
碌A(chǔ),
I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
10 V, I
C
=
5 mA
I
C
=
10 mA, I
B
=
0.3 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 k鈩?/div>
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 k鈩?/div>
1
2
3
Min
50
50
Typ
Max
Unit
V
V
碌A(chǔ)
碌A(chǔ)
mA
錚?/div>
V
V
0.1
0.5
0.01
160
460
0.25
4.9
0.2
鈭?0%
10
150
+30%
V
k鈩?/div>
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2004
SJJ00172BED
0.2
鹵0.1
5藲
1

XP04215相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC ...
  • 英文版
    Silicon PNP epitaxial planer transistor
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  • 英文版
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    PANASONIC ...
  • 英文版
    TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-88
    ETC
  • 英文版
    Composite Transistors
  • 英文版
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    PANASONIC
  • 英文版
    Silicon PNP epitaxial planer transistor
    PANASONIC ...
  • 英文版
    TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-88
    ETC
  • 英文版
    Composite Transistors
  • 英文版
    TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-88
    ETC
  • 英文版
    Composite Transistors
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    Composite Device - Composite Transistors
    ETC
  • 英文版
    Silicon PNP epitaxial planar type
    PANASONIC
  • 英文版
    TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-363
    ETC
  • 英文版
    Composite Transistors
  • 英文版
    Silicon NPN epitaxial planer transistor
    PANASONIC
  • 英文版
    Silicon NPN epitaxial planer transistor
    PANASONIC ...
  • 英文版
    TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-363
    ETC

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