Composite Transistors
XP04212
(XP4212)
Silicon NPN epitaxial planer transistor
Unit: mm
0.425
1.25鹵0.1
0.425
0.2鹵0.05
For switching/digital circuits
2.1鹵0.1
0.65
G
G
Two elements incorporated into one package.
(Transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half.
2.0鹵0.1
I
Features
0.65
1
2
3
6
5
4
0.2
0.9鹵0.1
G
0 to 0.1
I
Basic Part Number of Element
UNR1212(UN1212)
脳
2 elements
0.7鹵0.1
0.2鹵0.1
I
Absolute Maximum Ratings
(Ta=25藲C)
Parameter
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Ratings
50
50
100
150
150
鈥?5 to +150
Unit
V
V
mA
mW
藲C
藲C
Collector to base voltage
Rating
Collector to emitter voltage
of
element Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
1 : Emitter (Tr1)
4 : Emitter (Tr2)
2 : Base (Tr1)
5 : Base (Tr2)
3 : Collector (Tr2) 6 : Collector (Tr1)
EIAJ : SC鈥?8
S鈥揗ini Type Package (6鈥損in)
Marking Symbol:
8R
Internal Connection
1
2
3
Tr1
6
5
4
Tr2
I
Electrical Characteristics
Parameter
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Transition frequency
Input resistance
Resistance ratio
(Ta=25藲C)
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
OH
V
OL
f
T
R
1
R
1
/R
2
Conditions
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 2mA, I
B
= 0
V
CB
= 50V, I
E
= 0
V
CE
= 50V, I
B
= 0
V
EB
= 6V, I
C
= 0
V
CE
= 10V, I
C
= 5mA
I
C
= 10mA, I
B
= 0.3mA
V
CC
= 5V, V
B
= 0.5V, R
L
= 1k鈩?/div>
V
CC
= 5V, V
B
= 2.5V, R
L
= 1k鈩?/div>
V
CB
= 10V, I
E
= 鈥?mA, f = 200MHz
鈥?0%
0.8
150
22
1.0
+30%
1.2
4.9
0.2
60
0.25
V
V
V
MHz
k鈩?/div>
min
50
50
0.1
0.5
0.2
typ
max
Unit
V
V
碌A(chǔ)
碌A(chǔ)
mA
Note.) The Part number in the Parenthesis shows conventional part number.
0.12
鈥?.02
+0.05
1
1
2
3
