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XP0411M Datasheet

  • XP0411M

  • Composite Device - Composite Transistors

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  • ETC

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Composite Transistors
XP0411M
(XP411M)
Silicon PNP epitaxial planar transistor
For digital circuits
鈻?/div>
Features
鈥?/div>
Two elements incorporated into one package (Transistors with
built-in resistor)
鈥?/div>
Reduction of the mounting area and assembly cost by one half
1
2
3
(0.425)
Unit: mm
0.12
+0.05
鈥?.02
0.2
鹵0.05
6
5
4
1.25
鹵0.10
2.1
鹵0.1
(0.65) (0.65)
鈻?/div>
Basic Part Number of Element
鈥?/div>
UNR111M (UN111M)
脳
2 elements
10藲
1.3
鹵0.1
2.0
鹵0.1
0.9
鹵0.1
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Rating
of
element
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Total
Junction temperature
Storage temperature
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
鈭?0
鈭?0
鈭?00
150
150
鈭?5
to
+150
V
V
mA
mW
擄C
擄C
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
EIAJ: SC-88
0 to 0.1
Parameter
Symbol
Rating
Unit
Marking Symbol: EA
Internal Connection
6
Tr1
Tr2
1
2
3
5
4
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector to base voltage
Collector to emittter voltage
Collector cutoff current
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
Emitter cutoff current
DC current gain
Collector to emitter saturation voltage
High level output voltage
Low level output voltage
Input resistance
Resistance ratio
Gain bandwidth product
I
EBO
h
FE
V
CE(sat)
V
OH
V
OL
R
1
R
1
/ R
2
f
T
V
CB
= 鈭?0
V, I
E
=
1 mA, f
=
200 MHz
Conditions
I
C
= 鈭?0 碌A(chǔ),
I
E
=
0
I
C
= 鈭?
mA, I
B
=
0
V
CB
= 鈭?0
V, I
E
=
0
V
CE
= 鈭?0
V, I
B
=
0
V
EB
= 鈭?
V, I
C
=
0
V
CE
= 鈭?0
V, I
C
= 鈭?
mA
I
C
= 鈭?0
mA, I
B
= 鈭?/div>
0.3 mA
V
CC
= 鈭?
V, V
B
= 鈭?/div>
0.5 V, R
L
=
1 k鈩?/div>
V
CC
= 鈭?
V, V
B
= 鈭?.5
V, R
L
=
1 k鈩?/div>
Min
鈭?0
鈭?0
Typ
0.9
+0.2
鈥?.1
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
SMini6-G1 Package
Max
Unit
V
V
鈭?/div>
0.1
鈭?/div>
0.5
鈭?/div>
0.2
80
鈭?/div>
0.25
鈭?.9
鈭?/div>
0.2
鈭?0%
2.2
0.047
80
+30%
碌A(chǔ)
mA
V
V
V
k鈩?/div>
MHz
Note) The part number in the parenthesis shows conventional part number.
Publication date: July 2002
SJJ00239BED
0.2
鹵0.1
5藲
1

XP0411M相關(guān)型號(hào)PDF文件下載

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    描述
    廠商
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  • 英文版
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  • 英文版
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    ETC
  • 英文版
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  • 英文版
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  • 英文版
    Composite Device - Composite Transistors
    ETC
  • 英文版
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    PANASONIC
  • 英文版
    TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-363
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  • 英文版
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  • 英文版
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  • 英文版
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