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SXT-289 Datasheet

  • SXT-289

  • 1800-2500 MHz Power Amplifier

  • 8頁

  • STANFORD

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Product Description
Stanford Microdevices鈥?SXT-289 amplifier is a high efficiency
GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed
in low-cost surface-mountable plastic package. These HBT
MMICs are fabricated using molecular beam epitaxial growth
technology which produces reliable and consistent
performance from wafer to wafer and lot to lot.
These amplifiers are specially designed for use as driver
devices for infrastructure equipment in the 1800-2500 MHz
cellular, ISM, WLL and Wideband CDMA applications.
Its high linearity makes it an ideal choice for multi-carrier as
well as digital applications.
Typical IP3, P1dB, Gain
45
40
35
30
25
20
15
10
5
0
1960 MHz
2140 MHz
IP3
P1dB
Gain
SXT-289
1800-2500 MHz Power Amplifier
Product Features
鈥?/div>
Patented High Reliability GaAs HBT Technology
鈥?/div>
High Output 3rd Order Intercept : +42 dBm typ.
鈥?/div>
at 2450 MHz
Surface-Mountable Power Plastic Package
Applications
鈥?/div>
PCS Systems
鈥?/div>
WLL, Wideband CDMA Systems
鈥?/div>
ISM Systems
2450 MHz
Symbol
Parameters: Test Conditions:
Z
0
= 50 Ohms, Ta = 25C
Output Power at 1dB Compression
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
V s = 8V
Rbias = 27 ohms
Vdevice = 5 V typ.
Units
dB m
dB m
dB m
dB
dB
dB
-
dB m
dB m
dB m
dB
dB
dB
mA
擄 C/W
Min.
Typ.
23.5
23.5
23.0
Max.
P
1dB
S
21
Small signal gain
13.5
15.0
15.0
13.8
1.4:1
1.6:1
1.6:1
16.6
S
11
Input VSWR
IP
3
Output Third Order Intercept Point
(Pout/Tone = +11 dBm, Tone spacing = 1 MHz)
37.5
41.0
40.0
42.0
4.4
4.5
5.4
NF
Noise Figure
I
d
R
th
, j-l
Device Current
Thermal Resistance (junction - lead)
85
105
108
120
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user鈥檚 own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-101157 Rev D
1

SXT-289相關(guān)型號(hào)PDF文件下載

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  • 英文版
    1800-2500 MHz Power Amplifier
    STANFORD
  • 英文版
    1800-2500 MHz Medium Power GaAs HBT Amplifier
    SIRENZA
  • 英文版
    1800-2500 MHz Power Amplifier
    STANFORD [...

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