SUB45N03-13L
Vishay Siliconix
N-Channel 30-V (D-S), 175_C MOSFET
FEATURES
PRODUCT SUMMARY
V
(BR)DSS
(V)
30
r
DS(on)
(W)
0.013 @ V
GS
= 10 V
0.02 @ V
GS
= 4.5 V
I
D
(A)
45
a
45
a
D
TrenchFETr Power MOSFETS
D
175_C Junction Temperature
D
TO-263
G
G
D S
Top View
S
SUB45N03-13L
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche
Energy
b
L = 0.1 mH
T
C
= 25_C
T
A
= 25_C
d
T
C
= 25_C
T
C
= 125_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
30
"20
45
a
34
a
100
45
100
88
c
3.75
- 55 to 175
Unit
V
A
mJ
W
_C
Maximum Power Dissipation
b
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Package limited.
b. Duty cycle
v
1%.
c. See SOA curve for voltage derating.
d. When mounted on 1鈥?square PCB (FR-4 material).
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 71740
S-05010鈥擱ev. G, 05-Nov-01
www.vishay.com
PCB Mount
d
Symbol
R
thJA
R
thJC
Limit
40
1.7
Unit
_C/W
1