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STW5NA90 Datasheet

  • STW5NA90

  • N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

  • 6頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STW5NA90
STH5NA90FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
PRELIMINARY DATA
TYPE
ST W5NA90
ST H5NA90F I
s
s
V
DSS
900 V
900 V
R
DS(on)
< 2.5
鈩?/div>
< 2.5
鈩?/div>
I
D
5.3 A
3.5 A
s
s
s
s
TYPICAL R
DS(on)
= 2.1
鈩?/div>
鹵
30 V GATE-TO-SOURCE VOLTAGE
RATING
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
o
C
GATE CHARGE MINIMISED
REDUCED THRESHOLD VOLTAGE SPREAD
TO-247
3
2
1
3
2
1
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLY (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Valu e
STW 5NA90
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
t ot
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
Total Dissipation at T
c
= 25 C
Derating Factor
V
ISO
T
stg
T
j
Insulation W ithstand Voltage (DC)
Storage T emperature
Max. O perating Junction T emperature
o
o
Un it
ST H5NA90F I
900
900
鹵
30
V
V
V
3.5
2.2
21.2
60
0.48
4000
A
A
A
W
W/ C
V
o
o
o
5.3
3.4
21.2
150
1.2
錚?/div>
-65 to 150
150
C
C
(鈥? Pulse width limited by safe operating area
January 1998
1/6

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