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STU9NC80ZI Datasheet

  • STU9NC80ZI

  • N-CHANNEL 800V - 0.82ohm - 8.6A Max220/I-Max220 Zener-Protec...

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  • STMICROELECTRONICS   STMICROELECTRONICS

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STU9NC80Z
STU9NC80ZI
N-CHANNEL 800V - 0.82鈩?- 8.6A Max220/I-Max220
Zener-Protected PowerMESH鈩II MOSFET
TYPE
STU9NC80Z
STU9NC80ZI
s
s
s
s
s
s
V
DSS
800 V
800 V
R
DS(on)
<0.9鈩?/div>
<0.9鈩?/div>
I
D
8.6 A
8.6 A
TYPICAL R
DS
(on) = 0.82鈩?/div>
EXTREMELY HIGH dv/dt CAPABILITY
GATE-TO-SOURCE ZENER DIODES
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
1
2
3
Max220
I-Max220
DESCRIPTION
The third generation of MESH OVERLAY鈩?Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications.
APPLICATIONS
s
SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s
WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(1)
P
TOT
I
GS
V
ESD(G-S)
dv/dt(
q
)
V
ISO
T
stg
T
j
Parameter
STU9NC80Z
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuos) at T
C
= 25擄C
Drain Current (continuos) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Gate-source Current
Gate source ESD(HBM-C=100pF, R=15K鈩?
Peak Diode Recovery voltage slope
Insulation Winthstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
--
鈥?5 to 150
150
(1)I
SD
鈮?.6A,
di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
(*)Limited only by maximum temperature allowed
Value
STU9NC80ZI
800
800
鹵25
8.6
5.4
34.4
160
1.28
鹵50
4
3
2000
8.6(*)
5.4(*)
34.4(*)
55
0.44
Unit
V
V
V
A
A
A
W
W/擄C
mA
KV
V/ns
V
擄C
擄C
(鈥?Pulse width limited by safe operating area
Sep 2000
1/10

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