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STGD7NB60HT4 Datasheet

  • STGD7NB60HT4

  • N-CHANNEL 7A - 600V TO-220/DPAK POWERMESH IGBT

  • 327.19KB

  • STMicroelectronics   STMicroelectronics

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STGD7NB60H
N-CHANNEL 7A - 600V - DPAK
PowerMESH鈩?IGBT
TYPE
STD7NB60H
s
s
s
s
s
s
s
s
V
CES
600 V
V
CE(sat)
< 2.8 V
I
C
7A
s
HIGH INPUT IMPEDANCE
LOW ON-VOLTAGE DROP (V
cesat
)
OFF LOSSES INCLUDE TAIL CURRENT
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
VERY HIGH FREQUENCY OPERATION
CO-PACKAGED WITH TURBOSWITCHT
TYPICAL SHORT CIRCUIT WITHSTAND TIME
5MICROS S-family, 4 micro H family
ANTIPARALLEL DIODE
3
1
DPAK
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESH鈩?IGBTs, with outstanding perfomances.
The suffix "H" identifies a family optimized for high
frequency applications (up to 50kHz)in order to
achieve very high switching performances (reduced
tfall) mantaining a low voltage drop.
APPLICATIONS
s
HIGH FREQUENCY MOTOR CONTROLS
s
SMPS and PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
ECR
V
GE
I
C
I
C
I
CM
(
s
)
P
TOT
T
stg
T
j
Parameter
Collector-Emitter Voltage (V
GS
= 0)
Emitter-Collector Voltage
Gate-Emitter Voltage
Collector Current (continuos) at T
C
= 25擄C
Collector Current (continuos) at T
C
= 100擄C
Collector Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
Value
600
20
鹵 20
14
7
56
55
0.44
鈥?5 to 150
150
Unit
V
V
V
A
A
A
W
W/擄C
擄C
擄C
July 2000
1/9

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