鈻?/div>
V
CES
600V
V
CE(sat)
Max
@25擄C
<2.5V
I
C
@100擄C
7A
3
1
Low on voltage drop (V
cesat
)
Low C
RES
/ C
IES
ratio (no cross-conduction
susceptibility)
Very soft ultra fast recovery antiparallel diode
High frequency operation
DPAK
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH鈩?IGBTs, with outstanding
performances. The suffix 鈥淗鈥?identifies a family
optimized for high frequency application in order
to achieve very high switching performances
(reduced tfall) maintaining a low voltage drop.
Internal schematic diagram
Applications
鈻?/div>
鈻?/div>
鈻?/div>
High frequency inverters
SMPS and PFC in both hard switch and
resonant topologies
Motor drivers
Order codes
Part number
STGD6NC60HDT4
Marking
GD6NC60HD
Package
DPAK
Packaging
Tape & reel
February 2007
Rev 3
1/15
www.st.com
15
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