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STGD3NB60ST4 Datasheet

  • STGD3NB60ST4

  • N-CHANNEL 3A - 600V DPAK Power MESH IGBT

  • 8頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
STGD3NB60S
N-CHANNEL 3A - 600V DPAK
Power MESH鈩?IGBT
PRELIMINARY DATA
TYPE
STGD3NB60S
s
V
CES
600 V
V
CE(sat )
< 1.5 V
I
C
3 A
s
s
s
s
HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
VERY LOW ON-VOLTAGE DROP (V
cesat
)
HIGH CURRENT CAPABILITY
OFF LOSSES INCLUDE TAIL CURRENT
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX 鈥漈4鈥?
3
1
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH鈩?/div>
IGBTs,
with
outstanding
perfomances. The suffix 鈥漇鈥?identifies a family
optimized to achieve minimum on-voltage drop
for low frequency applications (<1kHz).
APPLICATIONS
s
LIGHT DIMMER
s
STATIC RELAYS
s
MOTOR CONTROL
DPAK
TO-252
(Suffix 鈥漈4鈥?
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
V
CES
V
ECR
V
GE
I
C
I
C
I
CM
(鈥?
P
tot
T
s tg
T
j
Parameter
Collector-Emitter Voltage (V
GS
= 0)
Reverse Battery Protection
G ate-Emitter Voltage
Collector Current (continuous) at T
c
= 25
o
C
Collector Current (continuous) at T
c
= 100 C
Collector Current (pulsed)
T otal Dissipation at T
c
= 25
o
C
Derating Factor
Storage T emperature
Max. Operating Junction Temperature
o
Value
600
20
鹵
20
6
3
24
40
0.32
-65 to 150
150
Un it
V
V
V
A
A
A
W
W /
o
C
o
o
C
C
(鈥? Pulse width limited by safe operating area
June 1999
1/8

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