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STGD3NB60SD Datasheet

  • STGD3NB60SD

  • N-CHANNEL 3A - 600V DPAK Power MESH IGBT

  • 8頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
STGD3NB60SD
N-CHANNEL 3A - 600V DPAK
Power MESH鈩?IGBT
PRELIMINARY DATA
TYPE
STGD3NB60SD
s
V
CES
600 V
V
CE(sat)
< 1.5 V
I
C
3A
s
s
s
s
s
HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
VERY LOW ON-VOLTAGE DROP (V
cesat
)
HIGH CURRENT CAPABILITY
OFF LOSSES INCLUDE TAIL CURRENT
INTEGRATED FREEWHEELING DIODE
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
3
1
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH鈩?/div>
IGBTs,
with
outstanding
perfomances. The suffix "S" identifies a family
optimized to achieve minimum on-voltage drop
for low frequency applications (<1kHz).
APPLICATIONS
s
GAS DISCHARGE LAMP
s
STATIC RELAYS
s
MOTOR CONTROL
DPAK
TO-252
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
GE
I
C
I
C
I
CM
(鈥?
P
tot
T
stg
T
j
Parameter
Collector-Emitter Voltage (V
GS
= 0)
Gate-Emitter Voltage
Collector Current (continuous) at T
c
= 25
o
C
Collector Current (continuous) at T
c
= 100
o
C
Collector Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
Value
600
鹵
20
6
3
25
48
0.32
-65 to 175
175
Unit
V
V
A
A
A
W
W/
o
C
o
o
C
C
(鈥? Pulse width limited by safe operating area
March 2000
1/8

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