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STG719 Datasheet

  • STG719

  • LOW VOLTAGE 4ohm SPDT SWITCH

  • 63.55KB

  • 7頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
STG719
LOW VOLTAGE 4鈩?SPDT SWITCH
s
s
s
s
HIGH SPEED:
t
PD
= 0.3 ns (TYP.) at V
CC
= 5V
t
PD
= 0.4 ns (TYP.) at V
CC
= 3.0V
LOW POWER DISSIPATION:
I
CC
= 1
碌A(chǔ)
(MAX.) at T
A
= 85
o
C
LOW 鈥漁N鈥?RESISTANCE:
R
ON
= 4
鈩?/div>
(MAX. T
a
=25
o
C) AT V
CC
= 5V
R
ON
= 6鈩?(TYP.) AT V
CC
= 3.0V
WIDE OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 1.8V to 5.5V SINGLE SUPPLY
SOT23-6L
ORDER CODES
PACKAGE
SOT23-6L
T UBE
T& R
STG719FTR
DESCRIPTION
The STG719 is an high speed SPDT CMOS
SWITCH frabricated in silicon gate C
2
MOS
technology. It is designed to operate from 1.8V to
5.5V, making this device ideal for portable
applications. It offers 4
鈩?/div>
ON-Resistance Max at
5V 25
o
C. Additional key features are fast
switching speed (t
ON
=7ns, t
OFF
=4.5ns) and Low
Power Consumption (<0.01
碌
W Typ.). ESD
immunity is higher than 1000V per Method
3015.7 of MIL-STD-883B. It鈥檚 avalable in the
commercial temperature range.
PIN CONNECTION AND IEC LOGIC SYMBOLS
June 2000
1/7

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