STG719
LOW VOLTAGE 4鈩?SPDT SWITCH
s
s
s
s
HIGH SPEED:
t
PD
= 0.3ns (TYP.) at V
CC
= 5V
t
PD
= 0.4ns (TYP.) at V
CC
= 3.3V
LOW POWER DISSIPATION:
I
CC
= 1碌A(chǔ)(MAX.) at T
A
=25擄C
LOW "ON" RESISTANCE:
R
ON
= 4鈩?(MAX. T
A
=25擄C) AT V
CC
= 5V
R
ON
= 6鈩?(TYP.) AT V
CC
= 3V
WIDE OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 1.8V TO 5.5V SINGLE SUPPLY
SOT23-6L
Table 1: Order Codes
PACKAGE
T&R
STG719STR
DESCRIPTION
The STG719 is an high-speed S.P.D.T. (Single
Pole Double Throw) SWITCH fabricated in silicon
gate C
2
MOS technology. It designed to operate
from 1.8V to 5.5V, making this device ideal for
portable applications, audio signal routing, video
switching, mobile and communication systems.
It offers 4鈩?ON-Resistance Max at 5V 25擄C and
very low ON-Resistance Flatness. Additional key
features are fast switching speed (t
ON
=7ns,
SOT23-6L
t
OFF
=4.5ns), Break Before Make Delay Time and
Low Power Consumption.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them ESD immunity and transient excess voltage.
It鈥檚 available in the commercial and extended
temperature range.
Figure 1: Pin Connection And IEC Logic Symbols
November 2004
Rev. 8
1/10