Using the latest high voltage MESH OVERLAY鈩?/div>
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patented STrip layout cou-
pled with the Company鈥檚 proprietary edge termina-
tion structure, gives the lowest RDS(ON) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
n
HIGH CURRENT, HIGH SPEED SWITCHING
n
SWITCH MODE POWER SUPPLY (SMPS)
n
DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
l
)
P
TOT
dv/dt (1)
V
ISO
T
stg
T
j
January 2002
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuos) at T
C
= 25擄C
Drain Current (continuos) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Insulation Winthstand Voltage (AC-RMS)
Storage Temperature
Max. Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
Value
200
200
鹵20
110
69
440
500
4
25
2500
鈥?5 to 150
150
(1)I
SD
鈮?10A,
di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
V
擄C
擄C
(鈥?Pulse width limited by safe operating area
1/8
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