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STB13007DT4 Datasheet

  • STB13007DT4

  • High voltage fast-switching NPN power transistor

  • 10頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STB13007DT4
High voltage fast-switching NPN power transistor
General features
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Improved specification: Lower leakage current,
Tighter gain range, DC current gain
preselection, Tighter storage time range
High voltage capability
Integrated free-wheeling diode
Low spread of dynamic parameters
Minimum lot-to-lot spread for reliable operation
Very high switching speed
Fully characterized at 125
擄C
Large RBSOA
In compliance with the 2002/93/EC European
Directive
1
D
2
PAK
(T0-263)
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3
Internal schematic diagram
Description
The device is manufactured using high voltage
Multi-Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure to enhance
switching speeds.
Applications
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Electronic transformers for halogen lamps
Switch mode power supplies
Order codes
Part Number
STB13007DT4
Marking
B13007D
Package
D
2
PAK
Packing
Tape & Reel
June 2006
Rev 1
1/10
www.st.com
10

STB13007DT4 產(chǎn)品屬性

  • STB13007DT4 View All Specifications

  • 1

  • 分離式半導體產(chǎn)品

  • 晶體管(BJT) - 單路

  • -

  • NPN

  • 8A

  • 400V

  • 3V @ 1A，5A

  • 100µA

  • 8 @ 5A，5V

  • 80W

  • -

  • 表面貼裝

  • TO-263-3，D²Pak（2 引線+接片），TO-263AB

  • D2PAK

  • Digi-Reel®

  • 497-5726-6

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