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SSM3J05FU Datasheet

  • SSM3J05FU

  • Power Management Switch High Speed Switching Applications

  • 5頁

  • TOSHIBA

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SSM3J05FU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J05FU
Power Management Switch
High Speed Switching Applications
路
路
路
Small package
Low on resistance : R
on
= 3.3
鈩?/div>
(max) (@V
GS
=
鈭?
V)
: R
on
= 4.0
鈩?/div>
(max) (@V
GS
=
鈭?.5
V)
Low gate threshold voltage
Unit: mm
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
Rating
-20
鹵12
-200
-400
150
150
-55~150
Unit
V
V
mA
Drain power dissipation (Ta
=
25擄C)
Channel temperature
Storage temperature range
mW
擄C
擄C
JEDEC
JEITA
TOSHIBA
鈥?/div>
SC-70
2-2E1E
Note 1: Mounted on FR4 board.
2
(25.4 mm
麓
25.4 mm
麓
1.6 t, Cu pad: 0.6 mm
麓
3)
Weight: 0.006 g (typ.)
Marking
Equivalent Circuit
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2003-03-27

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