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Low capacitance, high speed
Description
The Silonex series of silicon solderable planar
photodiodes feature low cost, high reliability, and linear
short circuit current over a wide range of illumination.
These devices are widely used for light sensing and
power generation because of their stability and high
efficiency. They are particularly suited to power
conversion applications due to their low internal
impedance, relatively high shunt impedance, and
stability. These devices also provide a reliable and
inexpensive detector for instrumentation and light
beam sensing applications.
Cathode
0.4
10.16
Anode
5.08
Sensitive Area
(45.9 sq.mm.)
Dimensions in mm. (+/- 0.13)
Also available with leads as part number SLSD-71N3
Directional Sensitivity Characteristics
40擄
50擄
30擄
20擄
10擄
1.0
0.8
0.6
0.4
0.2
0.0
Half Angle = 60擄
60擄
70擄
Absolute Maximum Ratings
Storage Temperature
Operating Temperature
80擄
-40擄C to +125擄C
-40擄C to +125擄C
90擄
100擄
1.0
0.8
0.6
0.4
20擄
40擄
60擄
80擄
100擄 120擄
Electrical Characteristics
(T
A
=25擄C unless otherwise noted)
Symbol
Parameter
Min
Typ
Max
I
SC
Short Circuit Current
1.3
2.1
V
OC
Open Circuit Voltage
0.40
I
D
Reverse Dark Current
1.7
C
J
Junction Capacitance
1.0
Spectral Sensitivity
0.55
S
位
V
BR
Reverse Breakdown Voltage
20
Maximum Sensitivity Wavelength
930
位
P
Sensitivity Spectral Range
400
1100
位
R
Acceptance Half Angle
60
胃
1/2
Specifications subject to change without notice
Notes: (1) Ee = light source @ 2854
擄K
Units
mA
V
碌A(chǔ)
nF
A/W
V
nm
nm
deg
Test Conditions
2
V
R
=0V, Ee=25mW/cm (1)
2
Ee=25mw/cm (1)
V
R
=5V, Ee=0
V
R
=0V, Ee=0, f=1MHz
位=940nm
I
R
=100碌A(chǔ)
(off center-line)
104112 REV 0
1
