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Visible to IR spectral irradiance range
High reliability
Oxide passivation
Linear short circuit current
Low capacitance, high speed
Available in arrays where # indicates number of
elements ( maximum of 9 elements )
0.4
2.54
5.08
Anode
Cathode
Sensitive Area
(10.4 sq. mm.)
Dimensions in mm. (+/- 0.13)
Description
The Silonex series of silicon solderable planar
photodiodes feature low cost, high reliability, and
linear short circuit current over a wide range of
illumination. These devices are widely used for light
sensing and power generation because of their
stability and high efficiency. They are particularly
suited to power conversion applications due to their
low internal impedance, relatively high shunt
impedance, and stability. These devices also provide
a reliable, inexpensive detector for applications such
as light beam sensing and instrumentation. The
electrical characteristics below are per element. In
the multi-element arrays the cathodes are common to
all elements.
Also available with leads as part number SLSD-71N1
Directional Sensitivity Characteristics
40擄
50擄
30擄
20擄
10擄
1.0
0.8
Half Angle = 60擄
60擄
0.6
0.4
70擄
80擄
90擄
100擄
0.2
0.0
Absolute Maximum Ratings
Storage Temperature
Operating Temperature
-40擄C to +125擄C
-40擄C to +125擄C
1.0
0.8
0.6
0.4
20擄
40擄
60擄
80擄
100擄
120擄
Electrical Characteristics
(T
A
=25擄C unless otherwise noted)
Symbol
Parameter
Min
I
SC
Short Circuit Current
0.4
V
OC
Open Circuit Voltage
I
D
Reverse Dark Current
C
J
Junction Capacitance
Spectral Sensitivity
S
位
V
BR
Reverse Breakdown Voltage
20
Maximum Sensitivity Wavelength
位
P
Sensitivity Spectral Range
400
位
R
Acceptance Half Angle
胃
1/2
Specifications subject to change without notice
Typ
0.5
0.40
0.4
0.55
930
1100
60
Max
Units
mA
V
碌A(chǔ)
nF
A/W
V
nm
nm
deg
Test Conditions
2
V
R
=0V, Ee=25mW/cm (1)
2
Ee=25mw/cm (1)
V
R
=5V, Ee=0
V
R
=0V, Ee=0, f=1MHz
位=940nm
I
R
=100碌A(chǔ)
1.7
104117 REV 0
Notes: (1) Ee = light source @ 2854
擄K
1
