SD1660
RF & MICROWAVE TRANSISTORS
800/900 MHz APPLICATIONS
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860 - 900 MHz
24 VOLTS
CLASS AB PUSH PULL
INTERNAL INPUT MATCHING
DESIGNED FOR HIGH POWER LINEAR
OPERATION
HIGH SATURATED POWER CAPABILITY
GOLD METALLIZATION FOR HIGH
RELIABILITY
DIFFUSED EMITTER BALLAST
RESISTORS
COMMON EMITTER CONFIGURATION
P
OUT
=
120 W MIN. WITH 6.0 dB GAIN
2 x .437 x .450 2LFL (M175)
epoxy sealed
ORDER CODE
SD1660
BRANDING
SD1660
PIN CONNECTION
DESCRIPTION
The SD1660 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors for high linearity Class AB operation in
cellular base station applications.
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
擄
C)
Symbol
Parameter
Value
Unit
1. Collector
2. Base
3. Emitter
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
60
30
3.0
25
310
+200
鈭?/div>
55 to +150
V
V
V
A
W
擄
C
擄
C
THERMAL DATA
R
TH(j-c)
November 1992
Junction-Case Thermal Resistance
0.55
擄C/W
1/7
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