PHOTODIODE
Si PIN photodiode
S3590-18/-19
Large area Si PIN photodiode for scintillation counting
Features
Applications
l
Suitable for coupling with blue scintillator (LSO, GSO, etc.)
l
Radiation detection (PET, etc.)
l
Internal quantum efficiency: 100 % (位=420 nm)
l
X-ray detection
l
S3590-19: bare chip type (without window)
s
Absolute maximum ratings
Parameter
Reverse voltage
Power dissipation
Operating temperature
Storage temperature
Symbol
V
R
P
Topr
Tstg
Value
100
100
-20 to +60
-20 to +80
Unit
V
mW
擄C
擄C
s
Electrical and optical characteristics (Ta=25 擄C)
Parameter
Spectral response range
Peak sensitivity wavelength
Photo sensitivity
Short circuit current
Dark current
Temperature coefficient of I
,
Cut-off frequency
Terminal capacitance
Noise equivalent power
Symbol
位
位p
S
Isc
I
D
T
CID
fc
Ct
NEP
位=位p
位=420
nm (LSO)
位=480
nm (BGO)
位=540
nm (CsI)
100
lx
V
R
=70 V
V
R
=70 V, -3 dB
R
L
=50
鈩?/div>
V
R
=70 V, f=1 MHz
Condition
Min.
-
-
-
-
-
-
-
-
-
-
-
-
S3590-18
Typ.
320 to
1100
960
0.65
0.28
0.34
0.38
100
4
1.12
40
40
7.6
脳
10
-14
Max.
-
-
-
-
-
-
-
10
-
-
-
-
Min.
-
-
-
-
-
-
-
-
-
-
-
-
S3590-19
Typ.
320 to
1100
960
0.58
0.33
0.37
0.4
86
4
1.12
40
40
7.6
脳
10
-14
Max.
-
-
-
-
-
-
-
10
-
-
-
-
Unit
nm
nm
A/W
A/W
A/W
A/W
碌A(chǔ)
nA
times/擄C
MHz
pF
W/Hz
1/2
1
2
