RSL020P03
Transistors
4V Drive Pch MOS FET
RSL020P03
Structure
Silicon P-channel MOS FET
External dimensions
(Unit : mm)
TUMT6
2.0
1.3
0.65 0.65
(6)
(5)
(4)
0.85Max.
Features
1) Low On-resistance.
2) High speed switching.
1pin mark
0.2
0.77
1.7
0.2
(1)
(2)
(3)
2.1
0~0.1
0.17
0.3
Applications
Switching
Abbreviated symbol : SL
Packaging specifications
Package
Type
RSL020P03
Code
Basic ordering unit (pieces)
Taping
TR
3000
Inner circuit
(6)
(5)
(4)
鈭?
鈭?
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
(1)
(2)
(3)
鈭?
ESD PROTECTION DIODE
鈭?
BODY DIODE
Absolute maximum ratings
(Ta=25擄C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
鈭?
Pw鈮?0碌s, Duty cycle鈮?%
鈭?
Mounted on a ceramic board
Symbol
V
DSS
V
GSS
I
D
I
DP
鈭?
I
S
I
SP
鈭?
P
D
鈭?
Tch
Tstg
Limits
鈭?0
鹵20
鹵2
鹵8
鈭?.8
鈭?
1
150
鈭?5
to
+150
Unit
V
V
A
A
A
A
W
擄C
擄C
Thermal resistance
Parameter
Channel to ambient
鈭?/div>
Mounted on a ceramic board
Symbol
Rth(ch-a)
鈭?/div>
Limits
125
Unit
擄C/W
0.15Max.
1/2
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