MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVP1
(a)
0.2+/-0.05
0.65+/-0.2
(c)
(b)
(b)
7.0+/-0.2
8.0+/-0.2
6.2+/-0.2
5.6+/-0.2
(d)
4.2+/-0.2
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W
DESCRIPTION
RD12MVP1 is a MOS FET type transistor
specifically designed for VHF RF power
amplifiers applications.
OUTLINE DRAWING
FEATURES
鈥igh Power Gain
Pout>10W, Gp>13dB@Vdd=7.2V,f=175MHz
鈥igh Efficiency: 55%min. (175MHz)
鈥o gate protection diode
INDEX MARK
[Gate]
(3.6)
(4.5)
0.95+/-0.2
2.6+/-0.2
TOP VIEW
DETAIL A
SIDE VIEW
1.8+/-0.1
BOTTOM VIEW
Terminal No.
(a)Drain [output]
(b)Source [GND]
(c)Gate [input]
(d)Source
For output stage of high power amplifiers in
VHF band mobile radio sets.
SIDE VIEW
Standoff = max 0.05
APPLICATION
0.7+/-0.1
UNIT:mm
DETAIL A
NOTES:
1. ( ) Typical value
RoHS COMPLIANT
RD12MVP1 is a RoHS compliant product.
RoHS compliance is indicating by the letter 鈥淕鈥?after the Lot Marking. This product includes the lead in high
melting temperature type solders. However, it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25
擄C
, UNLESS OTHERWISE NOTED)
SYMBOL
V
DSS
V
GSS
ID
Pin
Pch
Tj
Tstg
Rthj-c
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Input Power
Channel Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance
CONDITIONS
V
GS
=0V
V
DS
=0V
Zg=Zl=50
鈩?/div>
Tc=25
擄C
RATINGS
60
-5 to +20
4.0
1.0
125
+150
-40 to +125
1.5
UNIT
V
V
A
W
W
擄C
擄C
擄C/W
Junction to Case
Note: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
SYMBOL
I
DSS
I
GSS
V
TH
Pout
畏D
PARAMETER
Zero Gate Voltage Drain Current
Gate to Source Leak Current
Gate Threshold Voltage
Output Power
Drain Efficiency
(Tc=25
擄C
, UNLESS OTHERWISE NOTED)
CONDITIONS
V
DS
=17V, V
GS
=0V
V
GS
=10V, V
DS
=0V
V
DS
=12V, I
DS
=1mA
f=175MHz,V
DD
=7.2V
Pin=0.5W,Idq=1.0A
V
DD
=9.5V,Po=10W(Pin Control)
f=175MHz,Idq=1.0A,Zg=50
鈩?/div>
Load VSWR=20:1(All Phase)
LIMITS
MIN. TYP. MAX.
-
-
10
-
-
1.0
1.8
-
4.4
10
12
-
55
57
-
No destroy
UNIT
uA
uA
V
W
%
-
VSWRT Load VSWR tolerance
Note: Above parameters, ratings, limits and conditions are subject to change.
RD12MVP1
MITSUBISHI ELECTRIC
1/7
1st Jun. 2006
MITSUBISHI
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