MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD12MVS1
0.2+/-0.05
(0.22)
RoHS Compliance,
DESCRIPTION
RD12MVS1 is a MOS FET type transistor
specifically designed for VHF RF power
amplifiers applications.
Silicon MOSFET Power Transistor, 175MHz, 12W
OUTLINE DRAWING
6.0+/-0.15
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
1
4.9+/-0.15
1.0+/-0.05
2
High Power Gain:
Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz
High Efficiency: 57%typ. (175MHz)
3
INDEX MARK
(Gate)
(0.22)
(0.25)
(0.25)
APPLICATION
For output stage of high power amplifiers in
VHF band mobile radio sets.
0.2+/-0.05
0.9+/-0.1
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
RoHS COMPLIANT
RD12MVS1-101,T112 is a RoHS compliant
products.
RoHS compliance is indicate by the letter 鈥淕鈥?after the Lot Marking.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead older alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25
擄C
, UNLESS OTHERWISE NOTED)
SYMBOL
V
DSS
V
GSS
ID
Pin
Pch
Tj
Tstg
Rthj-c
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Input Power
Channel Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance
CONDITIONS
V
GS
=0V
V
DS
=0V
Zg=Zl=50
鈩?/div>
Tc=25
擄C
RATINGS
50
+/- 20
4
2
50
150
-40 to +125
2.5
UNIT
V
V
A
W
W
擄C
擄C
擄C/W
Junction to Case
Note: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
(Tc=25
擄C
, UNLESS OTHERWISE NOTED)
SYMBOL
I
DSS
I
GSS
V
TH
Pout
畏D
PARAMETER
Zero Gate Voltage Drain Current
Gate to Source Leak Current
Gate Threshold Voltage
Output Power
Drain Efficiency
Load VSWR tolerance
CONDITIONS
V
DS
=17V, V
GS
=0V
V
GS
=10V, V
DS
=0V
V
DS
=12V, I
DS
=1mA
f=175MHz,V
DD
=7.2V
Pin=1.0W,Idq=1.0A
V
DD
=9.2V,Po=12W(Pin Control)
f=175MHz,Idq=1.0A,Zg=50
鈩?/div>
Load VSWR=20:1(All Phase)
LIMITS
MIN. TYP. MAX.
-
-
10
-
-
1
1.8
-
4.4
11.5
12
-
55
57
-
Not destroy
UNIT
uA
uA
V
W
%
-
Note: Above parameters, ratings, limits and conditions are subject to change.
RD12MVS1
MITSUBISHI ELECTRIC
1/7
10 Jan 2006
2.0+/-0.05
FEATURES
3.5+/-0.05
MITSUBISHI
1
2
3
4
5
6
7
