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PTB 20204
1.0 Watt, 380鈥?00 MHz
RF Power Transistor
Description
The 20204 is a class A, NPN, common emitter RF power transistor
intended for 24 Vdc operation from 380 to 500 MHz. Rated at 1.0
watt minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization ensure excellent device reliability. 100% lot traceability
is standard.
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1.0 Watt, 380鈥?00 MHz
Class A Characteristics
-40 dB Max Two-Tone IMD at 1.0 W(PEP)
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
2.0
Output Power (Watts)
1.6
1.2
0.8
0.4
0.0
0.00
202
04
LO
TC
OD
E
V
CE
= 24 V
I
CQ
= 340 mA
f = 500 MHz
0.03
0.06
0.09
0.12
0.15
Input Power (Watts)
Package 20227
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25擄C
Above 25擄C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70擄C)
T
STG
R
胃JC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
60
60
4.0
0.5
11
0.0625
-40 to +150
16
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C/W
1
9/28/98