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PTB20179 Datasheet

  • PTB20179

  • 0.4 Watt, 1.8-2.0 GHz Cellular Radio RF Power Transistor

  • 205.00KB

  • 3頁(yè)

  • ERICSSON

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PTB 20179
0.4 Watt, 1.8鈥?.0 GHz
Cellular Radio RF Power Transistor
Description
The 20179 is an NPN, common emitter RF power transistor intended
for class A, 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 0.4 watt
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
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0.4 Watt, 1.8鈥?.0 GHz
Class A Characteristics
Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel
Typical Output Power vs. Input Power
1.0
Output Power (Watts)
0.8
0.6
0.4
0.2
0.0
0.00
V
CC
= 26 V
I
C
= 120 mA
f = 2.0 GHz
20
17
9
LO
TC
OD
E
0.02
0.04
0.06
0.08
0.10
0.12
Input Power (Watts)
Package 20227
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25擄C
Above 25擄C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70擄C)
T
STG
R
胃JC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
50
50
4.0
0.5
5.4
0.031
鈥?0 to +150
32.3
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C/W
1
9/28/98

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