PIN Photodiodes
PNZ322D
(PN322D)
Dual Division Silicon PIN Photodiode
Unit : mm
For optical information systems
1.0鹵0.1
5.0鹵0.1
2.54鹵0.1
4
3
1.8鹵0.3
0.8鹵0.2
0.6鹵0.1
Features
Fast response : t
r
, t
f
= 10 ns (typ.)
Good photo current linearity
Low dark current : I
D
= 10 nA (max.)
Small plastic package and visible light cutoff resin (flat type)
13.5鹵1.0
4.0鹵0.1
1.0鹵0.3
1.0鹵0.3
A B
5藲
4-0.6
+0.1
鈥?.2
1.0鹵0.1
5藲
4-0.5鹵0.15
1
10藲
0.2
+0.1
鈥?.05
Applications
Auto focus sensor for still cameras and video cameras etc.
Distance measuring systems
Position sensor for automatic assembly lines
Eye sensor for industrial robots
2
10藲
5藲
5藲
1: Anode A
2: Common cathode
3: Anode B
4: Common cathode
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Reverse voltage (DC)
Power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
R
P
D
T
opr
T
stg
Ratings
30
30
鈥?5 to +85
鈥?0 to +100
Unit
V
mW
藲C
藲C
Note) The PNZ0322 package consists of a visible
light cutoff resin. Therefore the chips (A and B)
shown in the drawing cannot actually be seen.
Dimensions of detection area
1.9
0.55
0.55
0.04
Unit : mm
1.26
1.0
A
B
Electro-Optical Characteristics
(Ta = 25藲C)
Parameter
Reverse voltage (DC)
Dark current
Photo current
Peak sensitivity wavelength
Response time
Capacitance between pins
Acceptance half angle
Symbol
V
R
I
D
I
L*3
位
P
t
r
, t
f*2
C
t
胃
I
R
= 10碌A(chǔ)
V
R
= 10V
V
R
= 10V, L = 1000 lx
*1
V
R
= 10V
V
R
= 10V, R
L
= 1k鈩?/div>
V
R
= 10V, f = 1MHz
Measured from the optical axis to the half power point
3
5
940
10
3
65
Conditions
min
30
10
typ
max
Unit
V
nA
碌A(chǔ)
nm
ns
pF
deg.
Note) The indicated values for absolute maximum ratings and electro-optical characteristics
are the values corresponding to individual elements.
*1
White tungsten lamp light source (color temperature T = 2856K)
*2
Semiconductor laser light source (位 = 800nm)
*3
Photo current measurement circuit
+10V
R
1
= R
2
R
1
R
2
;;
;
;;
Note) The part number in the parenthesis shows conventional part number.
1
1
2
3
