*
s
z
E f
FEYi
=
---
--=
-=-=
==
,鈥?E
an
AMP
company
Wireless Bipolar Power Transistor,
1.78 - 1.90 GHz
Features
NPN Silicon Microwave Power Transistor
Designed for Linear Amplifier Applications
Class AB:
-34
dBc Typ 3rd IMD at
15
Watts PEP
Class
A:
+48 dBm Typ 3rd Order lnrercept Point .
Common Emitter Configuration
Internal Input Impedance Matching
Diffused Emitter Ballasting
Gold Metallization System
15W
.
PH1819-15N
v2.00
Power Gain
I
Collector Efficiency
Input Return Loss
Load Mismatch Tolerance
3rd Order IMD
GP
I
%
7.0
25
10
-
-
-
dB
I鈥?,=26
V,,=26
V,,=26
V,,=26
V,,=26
V, I,,=25
V. I,,=25
V, I,,=25
V, I,,=25
mA, P,,,$5
W PEP, F=1880 MHz.
AF=lOO
kHz
-
-
1O:l
%
dB
-
dBc
mA, P,,.,=15 W PEP, F=1880 MHZ, AF=lOO kHz
-I
mA,
Pour
5 W PEP, F=l880
mA, P,,$5
MHz, AF=lOO kHz
RL
VSWR-T
IMD,
W PEP, F=1880 MHZ,
AF=lOO id-k
W PEP, F=1880 MHz,
~F=100 Cl.?
-
2 343
-30
V, Ico=25 mA, Poe15
Typical Optimum Device Impedances
FWW
1780
1850
1880
1880
Z,(Q)
lOStjl2.3
11.4+jll
11.9+j6.2
9.9 + j3.6
LCSQ)
l.S-il.9
1.6 - j2.2
1.6 - j2.5
1.6 - j2.7
iNPllT
NZTWO=X
-q-
-
JUTPLIT
NCTW3RK
1900
8.8+j1.9
1
1.4 -j2.7
ZiN i