RDS(on) = 1200 m鈩?/div>
N鈥揅hannel
D
Typical Applications
G
4
S
1
Unit
Vdc
Vdc
Vdc
VGS
VGSM
ID
ID
IDM
PD
TJ, Tstg
EAS
"20
"40
Adc
鈥?Continuous
鈥?Continuous @ 100擄C
鈥?Single Pulse (tp
v10
碌s)
Total Power Dissipation
Derate above 25擄C
Operating and Storage Temperature
Range
Single Drain鈥搕o鈥揝ource Avalanche
Energy 鈥?Starting TJ = 25擄C
(VDD = 100 V, VGS = 10 Vdc,
IL = 6 A, L = 25 mH, RG = 25
鈩?
Thermal Resistance
鈥?Junction鈥搕o鈥揅ase
鈥?Junction鈥搕o鈥揂mbient
鈥?Junction鈥搕o鈥揂mbient (Note 1.)
Maximum Lead Temperature for
Soldering Purposes, 1/8鈥?from case
for 10 seconds
6.0
4.8
21
142
1.14
鈥?5 to 150
450
Watts
W/擄C
擄C
mJ
Drain
NTP6N60
LLYWW
Gate
Source
Gate
Drain
Source
1
2
TO鈥?20AB
CASE 221A
STYLE 5
3
2
3
D2PAK
CASE 418B
STYLE 2
4
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥揝ource Voltage
鈥?Continuous
鈥?Non鈥揜epetitive (tp
v10
ms)
Drain
Symbol
VDSS
VDGR
Value
600
600
MARKING DIAGRAMS
AND PIN ASSIGNMENTS
Drain
Drain
NTB6N60
LLYWW
NTx6N60
LL
Y
WW
= Device Code
= Location Code
= Year
= Work Week
擄C/W
R
胃JC
R
胃JA
R
胃JA
TL
0.88
62.5
50
260
擄C
ORDERING INFORMATION
Device
NTP6N60
NTB6N60
NTB6N60T4
Package
TO鈥?20AB
D2PAK
D2PAK
Shipping
50 Units/Rail
50 Units/Rail
800/Tape & Reel
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
Preferred
devices are recommended choices for future use
and best overall value.
漏
Semiconductor Components Industries, LLC, 2000
1
November, 2000 鈥?Rev. 1
Publication Order Number:
NTP6N60/D
1
2
3
4
