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NTP13N10 Datasheet

  • NTP13N10

  • TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 13A I(D) |...

  • 8頁

  • ETC

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NTP13N10
Preferred Device
Advance Information
Power MOSFET
13 Amps, 100 Volts
N鈥揅hannel Enhancement鈥揗ode TO鈥?20
Features
鈥?/div>
Source鈥搕o鈥揇rain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
鈥?/div>
Avalanche Energy Specified
鈥?/div>
I
DSS
and R
DS(on)
Specified at Elevated Temperature
Typical Applications
http://onsemi.com
13 AMPERES
100 VOLTS
165 m鈩?@ V
GS
= 10 V
N鈥揅hannel
D
鈥?/div>
PWM Motor Controls
鈥?/div>
Power Supplies
鈥?/div>
Converters
MAXIMUM RATINGS
(T
C
= 25擄C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Drain鈥搕o鈥揝ource Voltage (R
GS
= 1.0 M鈩?
Gate鈥搕o鈥揝ource Voltage
鈥?Continuous
鈥?Non鈥揜epetitive (t
p
v10
ms)
Drain Current
鈥?Continuous @ T
A
25擄C
鈥?Continuous @ T
A
100擄C
鈥?Pulsed (Note 1.)
Total Power Dissipation @ T
A
= 25擄C
Derate above 25擄C
Operating and Storage Temperature Range
Single Drain鈥搕o鈥揝ource Avalanche Energy 鈥?/div>
Starting T
J
= 25擄C
(V
DD
= 50 Vdc, V
GS
= 10 Vdc,
I
L
(pk) = 13 A, L = 1.0 mH, R
G
= 25
鈩?
Thermal Resistance
鈥?Junction鈥搕o鈥揅ase
Maximum Lead Temperature for Soldering
Purposes, 1/8鈥?from case for 10 seconds
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D
I
D
I
DM
P
D
T
J
, T
stg
E
AS
85
擄C/W
R
胃JC
T
L
2.32
260
擄C
Value
100
100
"20
"30
Adc
13
8.0
39
64.7
0.43
鈥?5 to
+175
W
W/擄C
擄C
mJ
4
Unit
Vdc
Vdc
Vdc
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
TO鈥?20AB
CASE 221A
STYLE 5
NTP13N10
LLYWW
3
Source
2
Drain
1
1
Gate
2
3
NTP13N10
LL
Y
WW
= Device Code
= Location Code
= Year
= Work Week
1. Pulse Test: Pulse Width = 10
碌s,
Duty Cycle = 2%.
ORDERING INFORMATION
Device
NTP13N10
Package
TO鈥?20AB
Shipping
50 Units/Rail
Preferred
devices are recommended choices for future use
and best overall value.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
漏
Semiconductor Components Industries, LLC, 2002
1
February, 2002 鈥?Rev. 3
Publication Order Number:
NTP13N10/D

NTP13N10 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • -

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 100V

  • 13A

  • 165 毫歐 @ 6.5A，10V

  • 4V @ 250µA

  • 20nC @ 10V

  • 550pF @ 25V

  • 64.7W

  • 通孔

  • TO-220-3

  • TO-220AB

  • 管件

  • NTP13N10OS

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