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NTMS4N01R2 Datasheet

  • NTMS4N01R2

  • TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 5.9A I(D) |...

  • 8頁

  • ETC

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NTMS4N01R2
Power MOSFET
4.2 Amps, 20 Volts
N鈥揅hannel Enhancement鈥揗ode
Single SO鈥? Package
Features
鈥?/div>
High Density Power MOSFET with Ultra Low R
DS(on)
Providing
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Higher Efficiency
Miniature SO鈥? Surface Mount Package Saving Board Space;
Mounting Information for the SO鈥? Package is Provided
I
DSS
Specified at Elevated Temperature
Drain鈥搕o鈥揝ource Avalanche Energy Specified
Diode Exhibits High Speed, Soft Recovery
http://onsemi.com
4.2 AMPERES
20 VOLTS
0.045
W
@ V
GS
= 4.5 V
Single N鈥揅hannel
D
Applications
鈥?/div>
Power Management in Portable and Battery鈥揚(yáng)owered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones
MAXIMUM RATINGS
(T
J
= 25擄C unless otherwise noted)
Rating
Drain鈥搕o鈥揝ource Voltage
Drain鈥搕o鈥揋ate Voltage (R
GS
= 1.0 mW)
Gate鈥搕o鈥揝ource Voltage 鈥?Continuous
Thermal Resistance 鈥?/div>
Junction鈥搕o鈥揂mbient (Note 1.)
Total Power Dissipation @ T
A
= 25擄C
Continuous Drain Current @ 25擄C
Continuous Drain Current @ 70擄C
Pulsed Drain Current (Note 4.)
Thermal Resistance 鈥?/div>
Junction鈥搕o鈥揂mbient (Note 2.)
Total Power Dissipation @ T
A
= 25擄C
Continuous Drain Current @ 25擄C
Continuous Drain Current @ 70擄C
Pulsed Drain Current (Note 4.)
Thermal Resistance 鈥?/div>
Junction鈥搕o鈥揂mbient (Note 3.)
Total Power Dissipation @ T
A
= 25擄C
Continuous Drain Current @ 25擄C
Continuous Drain Current @ 70擄C
Pulsed Drain Current (Note 4.)
Operating and Storage
Temperature Range
Single Pulse Drain鈥搕o鈥揝ource Avalanche
Energy 鈥?Starting T
J
= 25擄C
(V
DD
= 20 Vdc, V
GS
= 5.0 Vdc, Peak I
L
= 7.5 Apk, L = 6 mH, R
G
= 25
鈩?
Maximum Lead Temperature for Soldering
Purposes, 1/8鈥?from case for 10 seconds
Symbol
V
DSS
V
DGR
V
GS
R
胃JA
P
D
I
D
I
D
I
DM
R
胃JA
P
D
I
D
I
D
I
DM
R
胃JA
P
D
I
D
I
D
I
DM
T
J
, T
stg
E
AS
Value
20
20
鹵10
50
2.5
5.9
4.7
25
100
1.25
4.2
3.3
20
162
0.77
3.3
2.6
15
鈥?5 to
+150
169
Unit
V
V
V
擄C/W
W
A
A
A
擄C/W
W
A
A
A
擄C/W
W
A
A
A
擄C
mJ
G
S
8
1
SO鈥?
CASE 751
STYLE 13
MARKING DIAGRAM
& PIN ASSIGNMENT
N.C.
Source
Source
Gate
1
2
3
4
Top View
E4N01
L
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
E4N01
LYWW
8
7
6
5
Drain
Drain
Drain
Drain
T
L
260
擄C
1. Mounted onto a 2鈥?square FR鈥? Board (1鈥?sq. 2 oz Cu 0.06鈥?thick single
sided), t
鈮?/div>
10 seconds.
2. Mounted onto a 2鈥?square FR鈥? Board (1鈥?sq. 2 oz Cu 0.06鈥?thick single
sided), t = steady state.
3. Minimum FR鈥? or G鈥?0 PCB, t = Steady State.
4. Pulse Test: Pulse Width = 300
ms,
Duty Cycle = 2%.
ORDERING INFORMATION
Device
NTMS4N01R2
Package
SO鈥?
Shipping
2500/Tape & Reel
漏
Semiconductor Components Industries, LLC, 2001
1
February, 2001 鈥?Rev. 2
Publication Order Number:
NTMS4N01R2/D

NTMS4N01R2 產(chǎn)品屬性

  • ON Semiconductor

  • MOSFET

  • N-Channel

  • 20 V

  • +/- 10 V

  • 4.2 A

  • 0.045 Ohms

  • Single Quad Drain Dual Source

  • + 150 C

  • SMD/SMT

  • SOIC-8 Narrow

  • Reel

  • 50 ns

  • 10 S

  • - 55 C

  • 2.5 W

  • 35 ns

  • 2500

  • 45 ns

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