NTE904
Integrated Circuit
General Purpose Transistor Array
(Two Isolated Transistors and a Darlington
Connected Transistor Pair)
Description:
The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic sub-
strate in a 12鈥揕ead TO5 type metal can. Two of the four transistors are connected in the Darlington
configuration. The substrate is connected to a separate terminal for maximum flexibility.
The transistors of the NTE904 are well suited to a wide variety of applications in low power systems
in the DC through VHF range. They may be used as discrete transistors in conventional circuits but
in addition they provide the advantages of close electrical and thermal matching inherent in integrated
circuit construction.
Features:
D
Matched Monolithic General Purpose Transistors
D
Current Gain Matched to
鹵10%
D
Base鈥揈mitter Voltage Matched to
鹵2mV
D
Operation from DC to 120MHz
D
Wide Operating Current Range
D
Low Noise Figure
Applications:
D
General use in Signal Processing Systems in DC through VHF Range
D
Custom Designed Differential Amplifiers
D
Temperature Compenstaed Amplifiers
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Collector鈥揈mitter Voltage (Each Transistor), V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector鈥揃ase Voltage (Each Transistor), V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector鈥揝ubstrate Voltage (Each Transistor, Note 1), V
CIO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Emitter鈥揃ase Voltage (Each Transistor), V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current (Each Transistor), I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Power Dissipation, P
D
Any One Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Total package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450mW
Derate Above 85擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/擄C
Operating Temperature Range, T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +125擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Note 1. The collector of each transistor is isolated from the substrate by an integral diode. The sub-
strate (Pin10) must be connected to the most negative point in the external circuit to maintain
isolation between transistors and to provide for normal transistor action.
1
2
3
