NTE6400 & NTE6400A
Unijunction Transistor
Description:
The NTE6400 & NTE6400A Silicon Unijunction Transistors are three terminal devices having a stable
鈥淣鈥?type negative resistance characteristic over a wide temperature range. A stable peak point volt-
age, a low peak point current, and a high pulse pulse current make these devices useful in oscillators,
timing circuits, trigger circuits, and pulse generators where they can serve the purpose of two conven-
tional silicon or germanium transistors.
These devices are intended for applications where circuit economy is of primary importance.
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
RMS Power Dissipation, P
D
Unstabilized . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450mW
Stabilized . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.9mW/擄C
RMS Emitter Current, I
E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Peak Emitter Current (T
J
= +150擄C), I
E(peak)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Emitter Reverse Voltage (T
J
= +150擄C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Interbase Voltage, V
BB
NTE6400 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
NTE6400A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55V
Operating Temperature Range, T
opr
Unstabilized . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +140擄C
Stabilized . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +175擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +175擄C
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.16擄C/mW
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Intrinsic Standoff Ratio
NTE6400
NTE6400A
Interbase Resistance
Modulated Interbase Current
Emitter Reverse Current
NTE6400
NTE6400A
Peak Point Emitter Current
Valley Point Current
Base鈥揙ne Peak Pulse Voltage
Symbol
畏
Test Conditions
V
BB
= 10V, Note 1
Min
0.4
54
4
6.8
鈥?/div>
鈥?/div>
鈥?/div>
8
3
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Max
0.80
0.67
12
30
12
1
25
鈥?/div>
鈥?/div>
碌A
mA
V
k鈩?/div>
mA
碌A
Unit
R
BBO
I
B2(MOD)
I
EO
V
BB
= 3V, I
E
= 0, Note 1
V
BB
= 10V, I
E
= 50mA
V
B2E
= 30V, I
B1
= 0
I
P
I
V
V
OB1
V
BB
= 25V
V
BB
= 20V, R
B2
= 100鈩?/div>
next
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