NTE3031
Phototransistor Detector
NPN鈥揝i, Visible & IR
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter鈥揅ollector Voltage, V
ECO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Device Dissipation, P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43mW/擄C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +125擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Lead temperature (During Soldering, 3 min), T
L
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Static Characteristics
Collector Dark Current
Collector鈥揈mitter Breakdown Voltage
Emitter鈥揅ollector Breakdown Voltage
Saturation Voltage
Optical Characteristics
Light Current
Photo Current Rise Time
I
L
t
r
V
CE
= 5V, R
L
= 100鈩? Note 1
R
L
= 1000鈩? V
CC
= 5V,
I
L
= 1mA (Peak)
1
鈥?/div>
鈥?/div>
6
鈥?/div>
鈥?/div>
mA
碌s
I
D
V
CE
= 10V
鈥?/div>
30
5
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.2
100
鈥?/div>
鈥?/div>
鈥?/div>
nA
V
V
V
V
(BR)CEO
I
C
= 100碌A(chǔ)
V
(BR)ECO
I
E
= 100碌A(chǔ)
V
CE(sat)
I
C
= 0.4mA
Symbol
Test Conditions
Min
Typ
Max
Unit
Note 1. Radiation flux density (H) equal to 5mW/cm
2
emitted from a tungsten source at a color
temperature of 2875 K.
Note 2. Angular response is defined as the total included angle between the half sensitivity points
and assuming a point source.
NTE3031 產(chǎn)品屬性
NTE
更換光電元件
否
1
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