NTE2561
Silicon NPN Transistor
Video Amplifier
Features:
D
High Gain鈥揃andwidth Product
D
High Breakdown Voltage
D
Large Current
D
Small Reverse Transfer Capacitance
Applications:
D
Wide鈥揃and Amplifiers
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Peak (Pulse) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0A
Collector Dissipation, P
C
T
A
= +25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.75W
T
C
= +25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain鈥揃andwidth Product
Output Capacitance
Reverse Transfer Capacitance
Collector鈥揈mitter Saturation Voltage
Base鈥揈mitter Saturation Voltage
Collector鈥揃ase Breakdown Voltage
Collector鈥揈mitter Breakdown Voltage
Emitter鈥揃ase Breakdown Voltage
Symbol
I
CBO
I
EBO
h
FE
f
T
C
ob
C
re
V
CE(sat)
V
BE(sat)
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
Test Conditions
V
CB
= 80V, I
E
= 0
V
EB
= 2V, I
C
= 0
V
CE
= 10V, I
C
= 50mA
V
CE
= 10V, I
C
= 100mA
V
CE
= 10V, I
C
= 100mA
V
CB
= 30V, f = 1MHz
V
CB
= 30V, f = 1MHz
I
C
= 300mA, I
B
= 30mA
I
C
= 300mA, I
B
= 30mA
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 1mA, R
BE
=
鈭?/div>
I
E
= 100碌A(chǔ), I
C
= 0
Min
鈥?/div>
鈥?/div>
30
20
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
100
80
3
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
1.2
4.4
3.8
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Max Unit
0.1
5.0
200
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.6
1.2
鈥?/div>
鈥?/div>
鈥?/div>
GHz
pF
pF
V
V
V
V
V
碌A(chǔ)
碌A(chǔ)
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