NTE2315
Silicon NPN Transistor
Fast Switching Power Darlington
Description:
The NTE2315 is a silicon epitaxial planer NPN power Darlington transistor in a TO220 type package
with an integrated base鈥揺mitter speed鈥搖p diode designed for use in high voltage, high current, fast
switching applications. In particular, the NTE2315 can be used in horizontal output stages of 110擄
CRT video displays and is primarily intended for large screen displays.
Absolute Maximum Ratings:
Collector鈥揃ase Voltage (I
E
= 0), V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Collector鈥揈mitter Voltage (V
BE
= 鈥?V), V
CEV
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Collector鈥揈mitter Voltage (I
B
= 0), V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Emitter鈥揃ase Voltage (I
C
= 0), V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Damper Diode Peak Forward Current, I
DM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Total Power Dissipation (T
C
鈮?/div>
+25擄C), P
tot
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperatuere Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.08擄C/W
Thermal Resistance, Junction鈥搕o鈥揂mbient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70擄C/W
Electrical Characteristics:
(T
C
= +25擄C unless otherwise specified)
Parameter
Collector Cutoff Current
Symbol
I
CES
I
CEV
Emitter Cutoff Current
Collector鈥揈mitter Sustaining Voltage
Collector鈥揈mitter Saturation Voltage
Base鈥揈mitter Saturation Voltage
DC Current Gain
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
Test Conditions
V
CE
= 400V, V
BE
= 0
V
CE
= 400V, V
BE
= 鈥?V
V
EB
= 6V, I
C
= 0
I
C
= 5A, I
B
= 50mA, Note 1
I
C
= 5A, I
B
= 50mA, Note 1
I
C
= 3A, V
CE
= 5V
Min
鈥?/div>
鈥?/div>
鈥?/div>
200
鈥?/div>
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
3500
Max
100
100
3
鈥?/div>
鈥?.5
2.0
鈥?/div>
Unit
碌A(chǔ)
碌A(chǔ)
mA
V
V
V
V
CEO(sus)
I
C
= 100mA, I
B
= 0, Note 1
Note 1. Pulse test: Pulse Duration = 300碌s, Duty Cycle = 1.5%.
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