NTE128P (NPN) & NTE129P (PNP)
Silicon Complementary Transistors
General Purpose Amp
Description:
The NTE128P (NPN) and NTE129P (PNP) are silicon complemedntary transistors designed for use
in general purpose power amplifier and switching applications.
Features:
D
High V
CE
Ratings
D
Exceptional Power Dissipation Capability
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current , I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Power Dissipation, P
TOT
T
A
= +25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.850W
T
C
= +25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Thermal Resistance, Junction鈥搕o鈥揂mbient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147擄C/W
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5擄C/W
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Collector鈥揈mitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector鈥揈mitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Symbol
I
CBO
I
EBO
h
FE
Test Conditions
V
CB
= 80V
V
EB
= 4V
I
C
= 10mA, V
CE
= 2V
I
C
= 350mA, V
CE
= 2V
V
CE(sat)
I
C
= 350mA
f
T
C
ob
I
C
= 50mA
V
CB
= 10V, I
E
= 0, f = 1MHz
Min
80
鈥?/div>
鈥?/div>
100
100
鈥?/div>
50
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Max
鈥?/div>
100
100
鈥?/div>
300
0.35
鈥?/div>
15
pF
V
Unit
V
nA
nA
BV
CEO
I
C
= 10mA, I
B
= 0
NTE128P 產(chǎn)品屬性
NTE
置換半導(dǎo)體
詳細(xì)信息
1
NTE128P相關(guān)型號(hào)PDF文件下載
-
型號(hào)
版本
描述
廠商
下載
-
英文版
Silicon NPN Transistor UHF Low Noise Wide.Band Amplifier
NTE
-
英文版
Silicon NPN Transistor UHF Low Noise Wide.Band Amplifier
NTE [NTE E...
-
英文版
Silicon Complementary Transistors High Current Amplifier
NTE
-
英文版
Silicon Complementary Transistors High Current Amplifier
NTE [NTE E...
-
英文版
Silicon NPN Transistor Low Voltage Output Amp
NTE
-
英文版
Silicon NPN Transistor Low Voltage Output Amp
NTE [NTE E...
-
英文版
Silicon PNP Transistor High Power, Low Frequency Driver
NTE
-
英文版
Silicon PNP Transistor High Power, Low Frequency Driver
NTE [NTE E...
-
英文版
Silicon NPN Transistor VHF Amp, Mixer, Oscillator, UHF OSC
NTE
-
英文版
Silicon NPN Transistor VHF Amp, Mixer, Oscillator, UHF OSC
NTE [NTE E...
-
英文版
Germanium Complementary Transistors Oscillator, Mixer for AM...
NTE
-
英文版
Germanium Complementary Transistors Oscillator, Mixer for AM...
NTE [NTE E...
-
英文版
RF TRANSISTOR, NPN, 25V; Transistor Polarity:NPN; Collector ...
NTE Electronics
-
英文版
Germanium Complementary Transistors Power Output, Driver
NTE
-
英文版
Germanium Complementary Transistors Power Output, Driver
NTE [NTE E...
-
英文版
BIPOLAR TRANSISTOR, NPN, 24V; Transistor Polarity:NPN; Colle...
NTE Electronics
-
英文版
Germanium PNP Transistor Audio Frequency Power Amplifier
NTE
-
英文版
Germanium PNP Transistor Audio Frequency Power Amplifier
NTE [NTE E...
-
英文版
Germanium PNP Transistor Audio Power Amp
NTE
-
英文版
Germanium PNP Transistor Audio Power Amp
NTE [NTE E...
1
2
